1 these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. dual n-channel logical level mosfet ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe tssop-8 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol maximum units v ds 20 v gs 12 t a =25 o c6.8 t a =70 o c5.4 i dm 30 i s 1.5 a t a =25 o c1.5 t a =70 o c1.0 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w symbol typ max t <= 10 sec 72 83 steady state 100 120 thermal resistance ratings maximum junction-to-ambient a o c/w r thja parame te r tssop-8 top view d1 s1 s1 1 2 3 d 1 s 1 g 1 n-channel mosfet d 2 s 2 g 2 n-channel mosfet 4 g1 d2 s2 s2 8 7 6 5 g2 v ds (v) r ds(on) (ohm) i d (a) 0.022 @ v gs = 4.5 v 6.8 0.030 @ v gs = 2.5v 5.8 0.047 @ v gs = 1.8v 4.7 20 product summary ao8 8 30 / mc8 8 30 freescale www.freescale.net.cn
2 notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing . min typ max gate-threshold voltage v gs(th) v gs = v ds , i d = 250 ua 0.7 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na v ds = 16 v, v gs = 0 v 1 ua v ds = 16 v, v gs = 0 v, t j = 55 o c 10 ua on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 30 a v gs = 4.5 v, i d = 6.8 a 0.022 v gs = 2.5 v, i d = 5.8 a 0.030 v gs = 1.8 v, i d = 4.7 a 0.047 forward tranconductance a g fs v ds = 10 v, i d = 6.8 a 25 s diode forward voltage a v sd i s = 6.8 a, v gs = 0 v 0.89 v total gate charge q g 13.4 gate-source charge q gs 0.9 ga t e -dra in ch a rg e q gd 2.0 turn-on delay time t d(on) 18 ris e time t r 25 turn-off delay time t d(off) 50 fall-time t f 25 unit specifications (t a = 25 o c unless otherwise noted) static te st conditions symbol parame te r zero gate voltage drain current i dss ? ns v dd =10v, v gs =4.5v, i d =1a , r gen =10 ? drain-source on-resistance a r ds(on) nc dynamic b v ds =10v, v gs =4.5v, i d =6.8a freescale reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided in freescale data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typicals? must be validated for each customer appl ication by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the freescale product could create a situation where personal inju ry or death may occur. should buyer purchase or use freescale products for any such uninte nded or unauthorized application, buyer shall indemnify and hold freescale and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that freescale was negligent regarding the design or m anufacture of the part. freescale is an equal opportunity/affirmative action employer. ao8 8 30 / mc8 8 30 freescale www.freescale.net.cn
3 typical electrical characteristics (n-channel) output characteristics transfer characteristics on-resistance vs. junction temperature gate charge capacitance on-resistance vs. drain current 0 5 10 15 20 25 30 00.511.522.53 v ds , drain-source voltage (v) i d , drain current (a) 3.5v 2.5v 2.0v v gs = 10.0v 4.5v 3.0v 0 5 10 15 20 25 30 0.511.522.533.5 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 5v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 5 10 15 20 25 30 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 2.0v 3.5v 3.0v 4.5v 2.5v 10.0v 4.0v 0 300 600 900 048121620 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v 0 1 2 3 4 5 012345678 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 4.5a v ds = 5v 15v 10v 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 4.5a v gs = 10v ao8 8 30 / mc8 8 30 freescale www.freescale.net.cn
4 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 175 ta, ambient temperature (oc) -vth, gate-source thresthol d voltage (v) vds = vgs id = -250ma typical electrical characteristics (n-channel) normalized thermal transien t junction to ambient single pulse power, junction-to-ambient vth gate to source voltage vs temperature source-drain diode forward voltage on-r esistance vs. gate-to-source voltage 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v 0.01 0.03 0.05 0.07 0.09 0246810 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 2.25a t a = 125 o c t a = 25 o c 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 208c/w t a = 25c 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja =208 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 ao8 8 30 / mc8 8 30 freescale www.freescale.net.cn
5 package information tssop-8: 8lead ao8 8 30 / mc8 8 30 freescale www.freescale.net.cn
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